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PD - 97316
IRG4PC50SDPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Standard: Optimized for minimum saturation voltage and low operating frequencies (<1kHz) IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package
Standard Speed CoPack IGBT
Features
C
VCES = 600V
G E
VCE(on) typ. = 1.28V
@VGE = 15V, IC = 41A
Benefits
n-channel
Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
C
E C G TO-247AC
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current
Max.
600 70 41 140 140 25 280 20 200 78 -55 to +150
Units
V
c
Clamped Inductive Load Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
d e
A
Continuous Gate-to-Emitter Voltage
V W
C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
--- --- --- ---
Typ.
--- --- 0.24 ---
Max.
0.64 0.83 --- 40
Units
C/W
1
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04/16/08
IRG4PC50SDPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
600 -- -- -- -- 3.0 -- 17 -- -- -- -- -- --
Typ.
-- 0.75 1.28 1.62 1.25 -- -9.3 34 -- -- -- 1.3 1.2 --
Max. Units
-- -- 1.36 -- -- 6.0 -- -- 250 2.0 1000 1.7 1.5 100 nA V A V V
Conditions
VGE = 0V, IC = 250A
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/C VGE = 0V, IC = 1mA (25C-150C) IC = 41A, VGE = 15V, TJ = 25C V IC = 80A, VGE = 15V, TJ = 25C IC = 41A, VGE = 15V, TJ = 150C VCE = VGE, IC = 250A
2
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
3
gfe ICES VFM IGES
mV/C VCE = VGE, IC = 250A (25C - 150C) S VCE = 100V, IC = 41A VGE = 0V, VCE = 600V VGE = 0V, VCE = 10V, TJ = 25C VGE = 0V, VCE = 600V, TJ = 150C IF = 25A IF = 25A, TJ = 150C VGE = 20V
13
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Etotal td(on) tr td(off) tf Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Peak Reverse Recovery Current Peak Reverse Recovery Current Peak Rate of Fall of Recovery During tb
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
180 24 61 0.72 8.27 8.99 33 30 650 400 15 31 31 1080 620 4100 250 48 50 105 4.5 8.0 112 420 250 160
Max. Units
280 37 92 -- -- 13 -- -- 980 600 -- -- -- -- -- -- -- -- 75 160 10 15 375 1200 -- -- nC A ns pF VGE = 0V VCC = 30V ns mJ ns mJ nC IC = 41A VGE = 15V VCC = 400V
Conditions
Ref.Fig 8
IC = 41A, VCC = 480V, VGE = 15V RG = 5.0, TJ = 25C
Energy losses include tail & diode reverse recovery
18a, 18b 18c
IC = 41A, VCC = 480V, VGE = 15V RG = 5.0, L = 200H, TJ = 25C
18a, 18b 18c
IC = 41A, VCC = 480V, VGE = 15V RG = 5.0, L = 200H TJ = 150C
18a, 18b 18c
7
f = 1.0Mhz TJ = 25C, VR = 200V, IF = 25A, di/dt=200A/s TJ = 125C, VR = 200V, IF = 25A, di/dt=200A/s TJ = 25C, VR = 200V, IF = 25A, di/dt=200A/s TJ = 125C, VR = 200V, IF = 25A, di/dt=200A/s TJ = 25C, VR = 200V, IF = 25A, di/dt=200A/s TJ = 125C, VR = 200V, IF = 25A, di/dt=200A/s
14 18a, 18d
15 18a, 18d 16 18a, 18d 17
A/s TJ = 25C, VR = 200V, IF = 25A, di/dt=200A/s TJ = 125C, VR = 200V, IF = 25A, di/dt=200A/s
Notes: Repetitive rating: VGE=15V; pulse width limited by maximum junction temperature. (See figure 20) VCC=80%(VCES), VGE=15V, RG = 5.0. (See figure 19) Pulse width 80s; duty factor 0.1%.
2
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IRG4PC50SDPBF
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PC50SDPBF
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50SDPBF
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com
Fig. 10 - Typical Switching Losses vs. Junction Temperature 5
IRG4PC50SDPBF
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
100
Instantaneous Forward Current - I F (A)
TJ = 150C TJ = 125C
10
TJ = 25C
1 0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
IRG4PC50SDPBF
140
100
120
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
100
I IRRM - (A)
I F = 50A I F = 25A
10
t rr - (ns)
80
IF = 50A I F = 25A
60
IF = 10A
I F = 10A
40
20 100
di f /dt - (A/s)
1000
1 100
1000
di f /dt - (A/s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
1500
10000
VR = 200V TJ = 125C TJ = 25C
1200
VR = 200V TJ = 125C TJ = 25C
900
IF = 50A
di(rec)M/dt - (A/s)
Q RR - (nC)
1000
IF = 10A
600
IF = 25A
I F = 25A
300
I F = 10A
0 100
IF = 50A
1000 100 100
di f /dt - (A/s)
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com
Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7
IRG4PC50SDPBF
90% Vge +Vge
Same type device as D.U.T.
Vce
Ic
10% Vce Ic
90% Ic
80% of Vce
430F D.U.T.
td(off) tf
5% Ic
Eoff =
t1+5S Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
trr id dt tx
tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
Vcc
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
8
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IRG4PC50SDPBF
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000F 100V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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9
IRG4PC50SDPBF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
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TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/08
10
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